Method of manufacturing heterojunction bipolar device having Si.

Details Method of manufacturing heterojunction bipolar device having Si. Method of manufacturing heterojunction bipolar device having Si.

1997-12-18

1999-06-22

Brown, Peter Toby

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

Having heterojunction

438322, 438324, 438325, 438326, 438340, 438341, 438933, 148DIG10, 148DIG11, 257511, 257512, 257525, 257555, 257574, H01L 21331

Patent

active

059151862

ABSTRACT:
In a semiconductor device manufacturing method for forming first and second bipolar transistors on a semiconductor substrate 1, a link base layer 5 for connecting a graft base layer (graft base layer 8) of the first bipolar transistor and an intrinsic base layer 12 to each other, and at least a part of a base layer 6 of the second bipolar transistor are formed simultaneously with each other, and then the link base layer 5 in a region where the intrinsic base layer 12 will be formed is removed by an etching treatment, and then by a selective epitaxial growth method, the intrinsic base layer 12 is formed in the region where the link base layer 5 is removed.

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