Semiconductor device having a built-in current-sensing diode

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

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Details

257335, 257337, 257570, H01L 2910, H01L 2702

Patent

active

053069374

ABSTRACT:
The present invention to a semiconductor switching device for use in semiconductor converter devices, which switching device has a built-in current sensor to detect the current flowing into parasitic diodes integrally formed as part of the semiconductor switching device. Detection of the parasitic-diode current is useful for adjusting the switching timing for a commutation, which in turn allows reduction in switching loss. The parasitic diodes consist of a first region of a first conductivity type serving as a semiconductor substrate, and a second region of a second conductivity type formed in a first surface portion of the first region. A third region of the same conductivity type, impurity concentration and depth as the second region is formed in the surface layer of the first region. When current flows through the parasitic diode, a current corresponding to the parasitic-diode current flows through the sensing diodes consisting of the first and the third regions. The sensing-diode current is drawn out and measured from the electrode making contact with the third region, thereby making it possible to determine the current flowing through the parasitic diodes.

REFERENCES:
patent: 3971055 (1976-07-01), Arai
patent: 4106048 (1978-08-01), Khajezadeh
patent: 4492972 (1985-01-01), Gorecki

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