Semiconductor memory having a plurality of sense amplifier circu

Details Semiconductor memory having a plurality of sense amplifier circu Semiconductor memory having a plurality of sense amplifier circu

1991-03-29

1993-12-14

Popek, Joseph A.

Static information storage and retrieval

Read/write circuit

365205, 36518909, G11C 700

Patent

active

052709710

ABSTRACT:
An improved semiconductor memory having a plurality of sense amplifier circuits corresponding to each bit line of a plurality of columns. A first common line is connected in common to the sense amplifier circuits, and a second common line is connected to the first common line. A first switching element is connected between the second common line and a reference voltage potential terminal, and a second switching element is connected to the first common line and the reference voltage potential. The second switching element corresponding to the first common line connected to one of the sense amplifier circuits is made conductive in response to a selection of the sense amplifier is disclosed.

REFERENCES:
patent: 4112508 (1978-09-01), Itoh
patent: 4195357 (1980-03-01), Kuo et al.
patent: 4242739 (1980-12-01), Hori et al.
patent: 4608670 (1986-08-01), Duvvury et al.
patent: 4627033 (1986-12-01), Hyslop et al.
Okamura et al., "Decoded-Source Sense Amplifier for High-Density DRAM's," IEEE Journal of Solid-State Circuits, vol. 25, No. 1, (Feb. 1990), pp. 18-22.

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