Method of forming a metal contact to landing pad structure in an

Details Method of forming a metal contact to landing pad structure in an Method of forming a metal contact to landing pad structure in an

1996-12-03

1999-06-22

Martin-Wallace, Valencia

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257 69, 257369, 257382, 438546, 438586, 438639, H01L 2900

Patent

active

059145188

ABSTRACT:
A method is provided for forming an improved landing pad of a semiconductor integrated circuit, and an integrated circuit formed according to the same. A first opening is formed through a first dielectric layer to expose a portion of a diffused region. A landing pad is formed over the first dielectric layer and in the opening. The landing pad preferably comprises a doped polysilicon layer disposed in the first opening and over a portion of the first dielectric layer. The landing pad will provide for smaller geometries and meet stringent design rules such as that for contact space to gate. A second dielectric layer having an opening therethrough is formed over the landing pad having an opening therethrough exposing a portion of the landing pad. A conductive contact, such as aluminum, is formed in the contact opening. The conductive contact will electrically connect with the diffused region through the landing pad. Misalignment of the conductive contact opening over the landing pad may be tolerated without invading design rules. Additionally, the landing pad will enhance planarization to provide for better step coverage of the metal contact in the second opening.

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