Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1995-07-07
1999-06-22
Carroll, J.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257374, 257508, H01L 2701
Patent
active
059145153
ABSTRACT:
A semiconductor device, which can realize a high speed operation of a transistor with a small leakage current whenever such operation is required, is disclosed. A SOI layer is formed on a monocrystalline silicon substrate through a silicon oxide film, and C-MOS circuits (inverter circuits) are configured with P-channel type MOSFETs and N-channel type MOSFETs on the layer. A bias electrode for P-channel is disposed within the silicon oxide film facing the P-channel type MOSFETs, while a bias electrode for N-channel is disposed within the silicon oxide film facing the N-channel type MOSFETs. A bias voltage switching circuit applies electric potentials to the bias electrodes for the P-channel and the N-channel to increase the respective absolute values of threshold voltages of the P-channel type and N-channel type MOSFETs when the MOSFETs are in a waiting state and applies the electric potentials to the bias electrodes for the P-channel and the N-channel to reduce the respective absolute values of threshold voltages of the P-channel type and N-channel type MOSFETs when the MOSFETs are in an operating state.
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K. Tsuruta et al., disclosure of US Serial Number 08/309,333 filed Sep. 20, 1994, abandoned.
Fukumoto Harutsugu
Tanaka Hiroaki
Tsuruta Kazuhiro
Carroll J.
Nippondenso Co., Ltd
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