Semiconductor device and process for fabricating the same

Details Semiconductor device and process for fabricating the same Semiconductor device and process for fabricating the same

1994-01-31

1995-05-09

Wojciechowicz, Edward

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257378, 257379, 257532, 257535, 361311, 361313, H01L 2702, H01G 406

Patent

active

054142911

ABSTRACT:
A semiconductor device comprising a MIS structure comprising a first electrically conductive film formed on an oxide film, a second electrically conductive film formed on at least a part of said first electrically conductive film, an insulator film formed on said second electrically conductive film, and a third electrically conductive film formed on said insulator film; and at least one electrode contact portion formed on said first electrically conductive film. A semiconductor device comprising a MIS capacitor having a diffusion layer inside the semiconductor substrate as a lower electrode with a first electrically conductive type being isolated using another diffusion layer having the opposite conductive type, and said another diffusion layer having the opposite conductive type being further isolated using a diffusion layer for isolation having the first conductive type and which is earthed. A BiCMOS semiconductor device comprising a resistor and an impurity source for the emitter and the emitter electrode for the bipolar transistor made of a same conductor layer, and further, a same conductor layer is provided as the contact electrode for the resistor and the gate for the MOS transistor. Also claimed are processes for fabricating the aforementioned semiconductor devices.

REFERENCES:
patent: 5055905 (1991-10-01), Anmo
patent: 5083184 (1992-01-01), Eguchi
patent: 5172201 (1992-12-01), Suizu

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