Nonvolatile memory, method of fabricating the same, and method o

Details Nonvolatile memory, method of fabricating the same, and method o Nonvolatile memory, method of fabricating the same, and method o

1993-03-18

1995-05-09

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257319, 257401, H01L 2968

Patent

active

054142865

ABSTRACT:
A nonvolatile memory including a plurality of memory cells comprising a semiconductor substrate, a first electrode formed on the substrate, a floating gate formed on the side wall of the first electrode, and a second electrode, wherein the memory cells are arranged in X and Y directions to form a matrix; the first electrodes of memory cells arranged in the Y direction are connected in common in the Y direction, the second electrodes are connected in common in the Y direction; a memory cell and one of its adjacent memory cells arranged in the X direction have a first impurity diffused layer in common; the memory cell and the other adjacent memory thereof have a second impurity diffused layer in common; and the first impurity diffused layers of the memory cells arranged in the X direction are further connected in common by a conductive layer.

REFERENCES:
patent: 5338952 (1994-08-01), Yamauchi
IEDM 91-319, pp. 11.7.1-11.7.4 by Yamauchi et al., Dec. 1991.

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