Semiconductor device having channel boundary with uneven shape

Details Semiconductor device having channel boundary with uneven shape Semiconductor device having channel boundary with uneven shape

1994-12-05

1997-03-18

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257653, 257344, 257240, H01L 2906

Patent

active

056125658

ABSTRACT:
A semiconductor device comprising a source region, a channel region, and a drain region, provided that one or both of the phase boundary between the channel forming region and the source region and that between the channel forming region and the drain region are shaped into an uneven shape, and optionally, periodically. Also claimed is a process for fabricating the same.

REFERENCES:
patent: 3414781 (1968-12-01), Dill
patent: 3586930 (1971-06-01), Das
patent: 4894694 (1990-01-01), Cham et al.

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