Thin film transistors without capacitances between electrodes th

Details Thin film transistors without capacitances between electrodes th Thin film transistors without capacitances between electrodes th

1992-03-03

1993-12-14

Lerner, Martin

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257 66, H01L 4902

Patent

active

052705676

ABSTRACT:
In this film transistor used for a liquid crystal display element, etc., the source and drain electrodes are formed at positions which do not overlap the gate electrode. Capacitances between the gate and source electrodes and between the gate and drain electrodes can be almost eliminated.

REFERENCES:
patent: 4951113 (1990-08-01), Huang et al.
patent: 5017984 (1991-05-01), Tanaka et al.
patent: 5109260 (1992-04-01), Tanaka et al.

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