Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1997-05-27
1998-11-24
Hardy, David B.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257404, H01L 2978
Patent
active
058411755
ABSTRACT:
Disclosed herein is a semiconductor device comprising a semiconductor substrate, a well region provided in the surface of the substrate, a plurality of MOSFETs provided in the well region. The well region has parts having a low surface impurity concentration. Some of the MOSFETs have their channel regions provided in those parts of the well region which have the low surface impurity concentration. The other MOSFETs have their channel regions provided in other parts of the well region.
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Koyanagi Masaru
Sugiura Souichi
Hardy David B.
Kabushiki Kaisha Toshiba
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