SOI input protection circuit

Details SOI input protection circuit SOI input protection circuit

1997-04-14

1998-11-24

Hardy, David B.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257347, 257350, 257497, 257653, H01L 2362

Patent

active

058411720

ABSTRACT:
In an input protection circuit having an SOI structure for protecting a MOSFET against breaking caused by a high voltage such as static electricity, a trench is provided in an SOI substrate to vertically pass through a silicon layer and a buried oxide film and reach the interior of a P-type silicon substrate. An n.sup.+ polysilicon layer is buried in the trench, to be connected with the silicon substrate by a P-N junction. A wire is connected to the n.sup.+ polysilicon layer. An end of the wire is connected to an input pad, and another end thereof is connected to an internal circuit. An input voltage is limited by an avalanche breakdown at the P-N junction in the interface between the n.sup.+ polysilicon layer and the P-type silicon substrate.

REFERENCES:
patent: 5113236 (1992-05-01), Arnold et al.
patent: 5382818 (1995-01-01), Pein
patent: 5567968 (1996-10-01), Tsuruta et al.
ULSI Dram Technology, Sep. 25, 1992, p. 67.

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