Fishing – trapping – and vermin destroying
Patent
1991-12-20
1993-12-14
Maples, John S.
Fishing, trapping, and vermin destroying
437236, 20419222, 20419225, 156663, H01L 21465, C23C 1400
Patent
active
052702634
ABSTRACT:
A process for depositing a thin film of aluminum nitride (AlN) includes sputtering an aluminum target with energetic nitrogen ions generated in a nitrogen plasma. A single gas (i.e. nitrogen) is used as both the reactive gas and as the sputtering gas. The process is especially adapted for forming an etchstop layer for use in forming contact vias through a dielectric layer in semiconductor manufacture. The process is also useful in semiconductor manufacture for forming an aluminum nitride (AlN) film that may be used as a passivation layer, as a ceramic packaging material, as a mask for ion implantation, as a substrate material in hybrid circuits, and as a high bandgap window for GaAs solar cells.
REFERENCES:
patent: 3600218 (1971-08-01), Pennebaker
patent: 3634149 (1972-01-01), Knippenberg et al.
patent: 4030942 (1977-06-01), Keenan et al.
patent: 4152182 (1979-05-01), Rutz
patent: 4761345 (1988-08-01), Sato et al.
patent: 4795679 (1989-01-01), Ramesh et al.
patent: 4796077 (1989-01-01), Takeda et al.
patent: 4843038 (1989-06-01), Kuratani et al.
patent: 4987102 (1991-01-01), Nguyen et al.
patent: 5075641 (1991-12-01), Weber et al.
Doan Trung T.
Kim Sung C.
Yu Chris C.
Gratton Stephen A.
Maples John S.
Micro)n Technology, Inc.
LandOfFree
Process for depositing aluminum nitride (AlN) using nitrogen pla does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Process for depositing aluminum nitride (AlN) using nitrogen pla, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for depositing aluminum nitride (AlN) using nitrogen pla will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1705332