Method and apparatus for fabrication of thin film semiconductor

Details Method and apparatus for fabrication of thin film semiconductor Method and apparatus for fabrication of thin film semiconductor

1991-12-31

1993-12-14

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156643, 156657, 156662, 156345, 21912169, 430296, 430313, 430317, 437228, 437249, 148 33, 257347, 257618, H01L 21306, B44C 122, C03C 1500, C03C 2506

Patent

active

052698823

ABSTRACT:
An apparatus and method for the nonplanar treatment of a volumetric workpiece or substrate utilizing exposure beam lithography are disclosed. The method includes supplying one or more layers of one or more semiconductor materials to surfaces of the substrate, applying a resist over the semiconductor layers, setting the resist, and then directing an exposure beam, such as an electron beam, toward the substrate. The substrate is then moved in at least two degrees freedom of movement, relative to the beam, with one degree of freedom of movement being the rotating of the substrate about an axis generally perpendicular to the beam. The other degree of freedom of movement could be moving the substrate linearly in a direction generally parallel to the axis. By such movement, the resist is exposed to the beam in a predetermined pattern. The exposed resist is then developed and a layer or layers under the exposed resist are etched. The remaining resist is then removed yielding the desired semiconductor device.

REFERENCES:
patent: 3401448 (1968-09-01), Iles et al.
patent: 3534467 (1970-10-01), Sachs et al.
patent: 3976508 (1976-08-01), Mlavsky
patent: 5106455 (1992-04-01), Jacobsen et al.
patent: 5131976 (1992-07-01), Hoko

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