Method of manufacturing semiconductor device

Details Method of manufacturing semiconductor device Method of manufacturing semiconductor device

1995-11-27

1998-11-24

Everhart, Caridad

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

438788, 438790, 427585, 427588, H01L 21443

Patent

active

058406310

ABSTRACT:
A method of manufacturing a semiconductor device includes the following steps. A lower wiring layer is formed on a semiconductor substrate through an insulating film. A compound gas having a catalysis for promoting formation of silicon oxide is added in an atmosphere using a main component gas consisting of ozone, water vapor, and one of alkoxysilane and organosiloxane as a source gas to form a silicon oxide film by a chemical vapor deposition (CVD) method directly on a surface of the semiconductor substrate on which the lower wiring layer is formed. An upper wiring layer is formed on the silicon oxide film.

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Muroyama et al., "Formation of Dielectric Films for Gap-Filling by . . . Deposition", Jpn. J. Appl. Phys., vol. 32, Part 1, No. 12B, Dec. 1993, pp. 6122-6125.

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