Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1997-03-24
1998-11-24
Tsai, Jey
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438308, 438662, 438940, H01L 2144
Patent
active
058406271
ABSTRACT:
A method for fabricating custom integrated circuits includes the steps of 1) patterning the layer to be customized with standard precision masking techniques to define all possible connections, vias or cut-points, and 2) using a non-precision targeting energy beam to select the desired connections, vias or cut-points for customization. Consequently, the present invention requires no custom mask so that application specific integrated circuits (ASICs) can be produced with lower lead-time and costs when compared to prior methods.
In other embodiments, a non-precision configuration mask may replace the targeting energy beam, where the configuration mask can be made by conventional mask-making techniques or by applying an opaque layer to a mask blank and using a targeting energy beam to selectively remove the desired portions of the opaque areas.
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Chen Tom
Clear Logic, Inc.
Kwok Edward C.
Tsai Jey
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