Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Patent
1995-08-30
1998-11-24
Robinson, Douglas W.
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
438164, H01L 2102, H01L 21302, H01L 21324, H01L 21329
Patent
active
058406000
ABSTRACT:
In forming an insulating film for a thin film transistor (TFT), a thermal oxidation film is formed by oxidation of silicon film at 500.degree. to 700.degree. C. or an insulating film composed mainly of silicon oxide deposited by physical vapor deposition (PVD) or chemical vapor deposition (CVD) is formed so as to cover island-like crystalline silicon, and then the resulting film is annealed at 400.degree. to 700.degree. C., preferably 450.degree. to 650.degree. C. in a highly reactive atmosphere of nitrogen oxide which is photoexcited or photodecomposed by ultraviolet rays. The thus modified silicon oxide film is used as the gate insulating film.
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Sakama Mitsunori
Takemura Yasuhiko
Yamazaki Shunpei
Costellia Jeffrey L.
Ferguson Jr. Gerald J.
Robinson Douglas W.
Semiconductor Energy Laboratory Co,. Ltd.
White Everett
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