Semiconductor contact via structure and method

Details Semiconductor contact via structure and method Semiconductor contact via structure and method

1990-04-30

1991-12-03

LaRoche, Eugene R.

357 68, 357 65, H01L 2348

Patent

active

050703919

ABSTRACT:
A contact opening through an insulating layer is filled with metal and etched back to form a metal plug within the opening. A metal interconnect line can then be formed over the contact, and makes electrical contact with the metal plug. Since the contact opening is filled by the metal plug, it is not necessary for the metal signal line to have a widened portion in order to ensure enclosure.

REFERENCES:
patent: 4837609 (1989-06-01), Gurvitch
patent: 4887146 (1989-12-01), Hinode

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