Method of forming a SiO.sub.2 passivation film on a plastic subs

Details Method of forming a SiO.sub.2 passivation film on a plastic subs Method of forming a SiO.sub.2 passivation film on a plastic subs

1996-06-11

1998-11-24

King, Roy Ven

Coating processes

Direct application of electrical, magnetic, wave, or...

Plasma

427573, 427574, 427578, 4272553, 4272552, 4272551, 438789, B05D 306, C23C 1622

Patent

active

058403744

ABSTRACT:
An SiO.sub.2 passivation film is formed on a surface of a substrate made of a plastic material by plasma chemical vapor deposition (CVD) process in which organic oxysilane is used as a raw gas. Instead of a reactive gas having an ashing effect, Ar, He or NH.sub.3 is used as a reactive gas which serves as an auxiliary for decomposing the raw gas at a temperature not greater than a temperature at which the substrate is thermally deformed (i.e., about 250.degree. C.). The ashing of the substrate by oxygen or hydrogen radicals is thus prevented.

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patent: 5643838 (1997-07-01), Dean et al.
Pierson et al, "Handbook of Chemical Vapor Deposition (CVD) Principles, Technology and Applications", Noyes Publications, 1992, pp. 101-103.
Hugh O. Pierson, "Handbook of Chemical Vapor Depostion (CVD), Principles, Technology and Applications", 1992, pp. 231-234.

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