Process for producing semiconductor device

Details Process for producing semiconductor device Process for producing semiconductor device

1990-12-14

1991-09-24

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437235, 148DIG118, 4272481, 4272553, H01L 2102

Patent

active

050513800

ABSTRACT:
In a process for producing a semiconductor device, deposition of a CVD-SiO.sub.2 film at a given first O.sub.3 concentration according to a TEOS-SiO.sub.3 reaction is followed by further deposition of a CVD-SiO.sub.2 film at a second O.sub.3 concentration higher than the first O.sub.3 concentration according to the TEOS-O.sub.3 reaction to form a CVD-SiO.sub.2 film having a predetermined thickness and a surface little uneven.

REFERENCES:
patent: 3055776 (1962-09-01), Stevenson
patent: 4845054 (1989-07-01), Mitchener
patent: 4872947 (1989-10-01), Wang et al.
Kotani et al., "Low Temperature APCVD Oxide Using TEOS-Ozone Chemistry for Multilevel Interconnections" IEDM, Dec. 3-6, 1989, pp. 669-671 IEEE, Washington, D.C.

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