Semiconductor memory device

Static information storage and retrieval – Read/write circuit – Differential sensing

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365 63, G11C 1300

Patent

active

051345889

ABSTRACT:
A semiconductor memory device of a type comprising a plurality of sense amplifiers of differential type arranged in one direction, a pair of bit lines extending outwardly from opposite sides of each of the sense amplifiers, a plurality of word lines extending in a direction intersecting the bit lines, and a memory cell disposed at each of intersecting points between the bit lines and the word lines. The device is characterized in that the memory cells which are connected respectively with the neighboring bit lines are connected with the different word lines. Therefore, not only can the interference noise between each bit-line pair be reduced, but also any possible erroneous operation can be eliminated, thereby increasing the data reading speed.

REFERENCES:
patent: 4546457 (1985-10-01), Nozaki et al.

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