Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Patent
1999-08-10
2000-03-14
Utech, Benjamin
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
438720, 438734, H01L 2100
Patent
active
060372648
ABSTRACT:
A method of etching a platinum electrode layer disposed on a substrate. The method comprises providing a substrate supporting a platinum electrode layer, an insulation layer on the platinum electrode layer, and a resist layer on the insulation layer. A portion of the insulation layer is etched by employing a plasma of an etchant gas to break through and to remove the portion of the insulation layer from the platinum electrode layer to expose part of the platinum electrode layer. The exposed part of the platinum electrode layer is then etched by employing a plasma of an etchant gas comprising argon. The etched platinum electrode layer is subsequently overetched by employing a high density plasma of an etchant gas to remove redeposited veils from the etched platinum electrode layer. The etched platinum electrode layer is employed in a semiconductor device.
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Applied Materials Inc.
Chen Kin-Chan
Utech Benjamin
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