Method of forming a smooth copper seed layer for a copper damasc

Details Method of forming a smooth copper seed layer for a copper damasc Method of forming a smooth copper seed layer for a copper damasc

1999-05-07

2000-03-14

Chaudhari, Chandra

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438760, 438765, 438776, 438774, H01L 2128

Patent

active

060372583

ABSTRACT:
A method for fabricating a copper interconnect structure, in a damascene type opening, comprised a thick copper layer, obtained via an electro-chemical deposition procedure, and comprised of an underlying, copper seed layer, featuring a smooth top surface topography, has been developed. The smooth top surface topography, of the underlying copper seed layer, is needed to allow the voidless deposition of the overlying, thick copper layer, and is also needed to allow the deposition of the overlying thick copper layer to be realized, with a surface that can survive a chemical mechanical polishing procedure, without the risk of unwanted dishing or spooning phenomena. The desirable, copper seed layer, is obtained via a process sequence that features: a plasma vapor deposition of a first copper seed layer; an argon purge procedure; and a second plasma vapor deposition of a second copper seed layer. The use of an argon purge, allows the increase in temperature, introduced by plasma bombardment, to be decreased, allowing a copper seed layer, featuring a smooth top surface topography, to be obtained.

REFERENCES:
patent: 4657778 (1987-04-01), Moran
patent: 4842891 (1989-06-01), Miyazaki et al.
patent: 5312509 (1994-05-01), Eschbach
patent: 5674787 (1997-10-01), Zhao et al.
patent: 5933758 (1999-08-01), Jain
Wolf, "Silicon Processing for the VLSI Era vol. 2-Process Integration", pp. 220-222, 1990.

Affiliated with

Also associated with

Rating

Method of forming a smooth copper seed layer for a copper damasc does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming a smooth copper seed layer for a copper damasc, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming a smooth copper seed layer for a copper damasc will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-168893