Method for producing a noble metal-containing structure on a sub

Details Method for producing a noble metal-containing structure on a sub Method for producing a noble metal-containing structure on a sub

1998-01-29

2000-03-14

Chaudhari, Chandra

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438240, 438250, 438686, 148281, 148283, 427252, C23C 1604

Patent

active

060372567

ABSTRACT:
A method for producing a noble metal-containing structure on a substrate, and a semiconductor component having such a noble metal-containing structure, include introducing a noble metal into a preliminary structure by converting a gaseous compound of the noble metal with a non-noble metal in a preliminary structure into elementary noble metal and a gaseous compound of the non-noble metal. The process continues until a desired amount of the non-noble metal in the preliminary structure is replaced by the noble metal.

REFERENCES:
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patent: 5356833 (1994-10-01), Maniar
patent: 5366766 (1994-11-01), Sekiguchi
patent: 5494704 (1996-02-01), Ackerman
"Anisotropic Platinum and PZT Etch Process for Advanced Ferroelectric Device Applications", Alfred Cofer et al., Tegal European Plasma Seminar Proceedings, 1995, pp. 33-38.
"Anisotropic Platinum and PZT Etch Process for Advanced Ferroelectric Devices", Alfred Cofer, VMCI Conference, 1995, pp. 638-639.
"Platinum Etching and Plasma Characteristics in RF Magnetron and Electron Cyclotron Resonance Plasmas", Kazuyasu Nishikawa et al., Jpn. J. Appl. Phys., vol. 32, 1993, pp. 6102-6108.

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