Method of titanium nitride contact plug formation

Details Method of titanium nitride contact plug formation Method of titanium nitride contact plug formation

1997-11-05

2000-03-14

Niebling, John F.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438643, 438648, 438652, 438653, 438656, 438668, 438672, 438675, 438680, 438685, H01L 214763

Patent

active

060372524

ABSTRACT:
A method of filling a via less than about 0.16 .mu.m in diameter in an oxide layer of a substrate with a TiN plug deposited by CVD and capping the plug with TiN only. In one embodiment, a first layer of TiN is deposited on a substrate by thermal CVD, and a second layer of TiN is deposited on the first layer by PECVD. Alternatively, a one-step process is used to deposit a TiN layer using either thermal CVD or PECVD. The method eliminates a tungsten layer, and thus eliminates a processing step.

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Mey, Y. J. et al., Characterization of TiN film grown by low-pressure-chemical-vapor-deposition, Thin Solid Films 308-309, pp. 594-598 (1997).
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