Method of simultaneous formation of salicide and local interconn

Details Method of simultaneous formation of salicide and local interconn Method of simultaneous formation of salicide and local interconn

1997-03-21

1999-06-08

Everhart, Caridad

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438655, 438660, H01L 2144

Patent

active

059111143

ABSTRACT:
A method of simultaneously forming refractory metal salicide and a local interconnect proceeds, after the standard formation of N+ and P+ junctions, by depositing titanium and TiN films and annealing the structure in nitrogen ambient to form a salicide film on the exposed source, drain and gate regions. A local interconnect mask is then employed to form local interconnect resist patterns. The TiN and unreacted titanium film are then etched off using a wet strip without attacking either salicide or field oxide. Following the etch, the salicide and local interconnect are again subjected to a rapid thermal anneal in a nitrogen ambient to reduce the sheet resistance of the salicide and the local interconnect and to convert the remaining titanium in the local interconnect into TiN film. The process flow can also be applied if cobalt is used instead of titanium and the cobalt is covered with a TiN cap.

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