Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1997-06-13
2000-03-14
Tsai, Jey
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438622, 438671, 438672, 438687, H01L 214763
Patent
active
060372486
ABSTRACT:
The present invention is directed to a semiconductor interconnect structure comprised of a promoter layer defining openings and a metal layer having a portion elevated above the substrate assembly and a portion that fills the openings. The metal layer is in electrical contact with the substrate assembly through the portion of the metal layer that fills the openings. The portion of the metal layer that fills the openings supports the elevated portion of the metal layer. A method of fabricating a semiconductor interconnect structure is also provided. A resist layer is patterned on a substrate assembly to define openings. A metal layer is deposited on the resist layer and into the openings, and the resist layer is removed to form a gap between the metal layer and the underlying substrate assembly.
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Micro)n Technology, Inc.
Tsai Jey
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