Method of making hetero-structure

Details Method of making hetero-structure Method of making hetero-structure

1997-07-15

2000-03-14

Chaudhuri, Olik

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Amorphous semiconductor

438480, 438482, 438509, 257187, 257190, H01L 2120

Patent

active

060372427

ABSTRACT:
A method of preparing an AlInAs/GaAs hetero-structure includes forming an Al.sub.1-x In.sub.x As (0<x<1) buffer layer in an amorphous state on a GaAs substrate, annealing the amorphous buffer layer to crystallize the buffer layer into a single crystal buffer layer, and forming a single crystal Al.sub.1-x' In.sub.x' As (0<x'<1) active layer on the single crystal buffer layer.

REFERENCES:
patent: 5053843 (1991-10-01), Choudhury et al.
patent: 5371387 (1994-12-01), Ando
patent: 5411914 (1995-05-01), Chen et al.
patent: 5525538 (1996-06-01), Twigg et al.
patent: 5633516 (1997-05-01), Mishima et al.
patent: 5751030 (1998-05-01), Fujimoto et al.
Ueda et al., "Effects of the Substrate Offset Angle on the Growth of GaAs on Si Substrate", Japanese Journal of Applied Physics, vol. 25, No. 9, Sep. 1986, pp. L789-L790.
Hayafuji et al., "Improvement of InP Crystal Quality on GaAs Substrates by Thermal Cyclic Annealing", Japanese Journal of Applied Physics, vol. 28, No. 10, Oct. 1989, pp. L1721-L1724.
Hayafuji et al., "Large Scale MOCVD Growth of GaAs-On-Si by Atomic Layer Epitaxy Using Intial Buffer Layers", North-Holland Physics Publishing, reprinted from Journal of Crystal Growth, vol. 106, 1990, pp. 421-425.
Chen et al., "A High Performance 0.12.mu.m T-Shape Gate Ga.sub.0.5 In.sub.0.5 As/Al.sub.0.5 In.sub.0.5 As Modfet Grown by MBE Lattice Mis-Matched on a GaAs Substrate", International Electron Devices Meeting, 17.7, pp. 431-434, Dec. 6-9, 1987.
Mishima et al., "High G.sub.m In.sub.0.5 Al.sub.0.5 As/In.sub.0.5 Ga.sub.0.5 As High Electron Mobility Transistors Grown Lattice-Mismatched on GaAs Substrates", Journal of Crystal Growth 150, pp. 1230-1235, 1995.

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