Semiconductor device manufacturing: process – Making passive device – Stacked capacitor
Patent
1998-02-13
2000-03-14
Whitehead, Jr., Carl
Semiconductor device manufacturing: process
Making passive device
Stacked capacitor
438253, 438387, 438244, 438574, 438579, 438666, 438239, 257308, 257309, 257317, H01L 218242, H01L 2120, H01L 2128, H01L 2144
Patent
active
060372346
ABSTRACT:
A method of fabricating a capacitor in a DRAM. A semiconductor substrate having a metal-oxide-semiconductor is provided. Using only one photolithography process, a bottom electrode is formed. By forming a dielectric layer over the substrate, and a poly-silicon layer on the dielectric layer, a capacitor is formed.
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Chen Anchor
Hong Gary
Jr. Carl Whitehead
Park James
United Semiconductor Corp.
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