Process for patterning metal connections in small-geometry semic

Details Process for patterning metal connections in small-geometry semic Process for patterning metal connections in small-geometry semic

1991-07-22

1993-07-06

Dang, Thi

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156656, 156665, 437228, 437246, 437192, 437194, H01L 2100

Patent

active

052250407

ABSTRACT:
A technique for removing unwanted portions of a metallization layer in a semiconductor structure, without damage to underlying protective layers of silicon dioxide. The metallization layer is formed with an underlying etch stop layer of titanium-tungsten, the removal of which is effected by a very thin layer of aluminum formed beneath the titanium-tungsten. After removal of unwanted portions of the metallization layer, using a plasma etch to which the titanium-tungsten is resistant, corresponding portions of the titanium tungsten layer are removed using a plasma-etch to which aluminum is resistant. The thin aluminum layer functions as a highly effective etch stop in the removal of titanium-tungsten, but is so thin that there is negligible penetration of aluminum into underlying contact regions.

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