Method of producing stoichiometric, epitaxial, monocrystalline f

Details Method of producing stoichiometric, epitaxial, monocrystalline f Method of producing stoichiometric, epitaxial, monocrystalline f

1991-08-09

1993-07-06

Kunemund, Robert

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

148DIG148, 156610, 156614, 156DIG64, 156DIG73, 156DIG89, 437100, C30B 1900

Patent

active

052250326

ABSTRACT:
Single crystalline, epitaxial, stoichiometric SiC films are deposited on single crystalline silicon substrates by a procedure which involves first treating the surface of the silicon substrate to remove any surface layer of SiO.sub.2, followed by heating the substrate to temperature within the range of from about 600.degree. to about 1000.degree.0 C. and flowing a stream including a gaseous compound of Si, H and C--free of halogen and containing Si and C in 1:1 atomic ratio--over the heated substrate.

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