Process for depositing an oxide epitaxially onto a silicon subst

Details Process for depositing an oxide epitaxially onto a silicon subst Process for depositing an oxide epitaxially onto a silicon subst

1991-04-10

1993-07-06

Kunemund, Robert

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156610, 156611, 156DIG64, 156DIG78, 156DIG89, 427255, 148 33, C30B 2514

Patent

active

052250318

ABSTRACT:
A process and structure involving a silicon substrate utilizes an ultra high vacuum and molecular beam epitaxy (MBE) methods to grow an epitaxial oxide film upon a surface of the substrate. As the film is grown, the lattice of the compound formed at the silicon interface becomes stabilized, and a base layer comprised of an oxide having a sodium chloride-type lattice structure grows epitaxially upon the compound so as to cover the substrate surface. A perovskite may then be grown epitaxially upon the base layer to render a product which incorporates silicon, with its electronic capabilities, with a perovskite having technologically-significant properties of its own.

REFERENCES:
patent: 3645788 (1972-02-01), Mee et al.
patent: 3850679 (1974-11-01), Sopko et al.
patent: 4509990 (1985-04-01), Vasudev
patent: 4592927 (1986-06-01), Stall
patent: 4927670 (1990-05-01), Erbil
McKee et al., "Molecular Beam Epitaxy Growth of Epitaxial Barium Silicide, Barium Oxide, . . . On Silicon", Appl. Phys. Lett. 59(7) Aug. 12, 1991 pp. 782-784.

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