Method for growing multiple single crystals and apparatus for us

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

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1566181, 156DIG115, 422253, C30B 1512

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active

052883663

ABSTRACT:
A method for growing multiple high-purity single crystals from a replenished melt by maintaining the purity of molten source material in the melt held in a crucible in a furnace of the type used for growing high-purity single crystals. The method includes the steps of growing at least one crystal from the source material in the crucible, extracting a portion of a volume of the melt remaining in the crucible, adding high-purity source material to the melt, and growing at least one more single crystal. Extractor apparatus used in the method includes an insulated receptacle having an inlet tube for conducting molten source material into the receptacle. A vacuum attached to the receptacle is used to draw the source material into the receptacle.

REFERENCES:
patent: 2893847 (1959-07-01), Schweickert et al.
patent: 3337303 (1967-08-01), Lorenzini et al.
patent: 4036595 (1977-07-01), Lorenzini et al.
patent: 4134785 (1979-01-01), Lavigna et al.
patent: 4249988 (1981-02-01), Lavigna et al.
patent: 4454096 (1984-06-01), Lorenzini et al.
patent: 4710260 (1987-12-01), Witter et al.
patent: 4894206 (1990-01-01), Yamashita et al.
patent: 4936949 (1990-06-01), Kida et al.
patent: 4981549 (1991-01-01), Yamashita et al.
patent: 5009862 (1991-04-01), Kida et al.
patent: 5034200 (1991-07-01), Yamashita et al.
patent: 5067989 (1991-11-01), Yokota et al.
patent: 5087321 (1992-02-01), Kamio et al.
patent: 5087429 (1992-02-01), Kamio et al.
patent: 5131974 (1992-07-01), Oda et al.
George Fiegl and Walter Torbet of Siltec Corp. for NASA's Jet Propulsion Laboratory, "Two-Crucible Czochralski Process," NASA Tech Briefs, Spring 1984.
Electronics, "Silicon Furnace Gets Multiple Charges," Electronics, Jun. 22, 1978, pp. 44-45.
W. Zulehner et al., "Czochralski-Grown Silicon," Crystals; Growth, Properties, and Applications 8, pp. 32, 91-104 (1982).

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