Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1993-12-10
1999-06-08
Jackson, Jr., Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257370, 257517, 257518, 257588, 257592, H01L 2973, H01L 29417
Patent
active
059106760
ABSTRACT:
A BiCMOS structure and a method for making the same is disclosed, where the dielectric layer between the emitter electrode and the base region is formed of a deposited dielectric. After definition of the bipolar and MOS moat regions, a layer of polysilicon is deposited thereover, and removed from the bipolar region. The base implant is performed either prior to or after the etch of the polysilicon layer. A layer of TEOS oxide is formed thereover and is etched to remain in portions of the bipolar region, with an emitter contact formed therethrough and a portion of the bipolar region exposed at which the extrinsic base is formed. An alternative embodiment of the invention includes scaling the emitter contact by forming sidewall oxide filaments therewithin. A second layer of polysilicon is disposed thereover to form the emitter electrode, and to merge with the first layer to form the gates of the MOS transistors. Subsequent patterning and etching of the polysilicon, followed by sidewall filament formation and source/drain doping, is performed to complete the structure.
REFERENCES:
patent: 4486942 (1984-12-01), Hirao
patent: 4508579 (1985-04-01), Goth et al.
patent: 4579600 (1986-04-01), Shah et al.
patent: 4691436 (1987-09-01), Hirao
patent: 4735916 (1988-04-01), Homma et al.
patent: 4737472 (1988-04-01), Schaber et al.
patent: 4783422 (1988-11-01), Kawkatsu
patent: 4784966 (1988-11-01), Chen
patent: 4874717 (1989-10-01), Neppl et al.
patent: 4902640 (1990-02-01), Sachitano et al.
patent: 4931407 (1990-06-01), Maeda et al.
patent: 4946798 (1990-08-01), Kawakatsu
patent: 4957874 (1990-09-01), Soejima
patent: 4985744 (1991-01-01), Spratt et al.
patent: 5065208 (1991-11-01), Shah et al.
patent: 5214302 (1993-05-01), Uchida et al.
Eklund Robert H.
Prengle Scott H.
Brady Wade James
Donaldson Richard L.
Garner Jacqueline J.
Jackson, Jr. Jerome
Texas Instruments Incorporated
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