Semiconductor integrated circuit device and method of fabricatin

Details Semiconductor integrated circuit device and method of fabricatin Semiconductor integrated circuit device and method of fabricatin

1997-05-16

1999-06-08

Meier, Stephen D.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257370, H01L 2976, H01L 2994, H01L 31062, H01L 31113

Patent

active

059106743

ABSTRACT:
A semiconductor integrated circuit device wherein a semiconductor layer of a second conductivity type is formed at a region excluding a region where a semiconductor element of the second conductivity type is formed, or at a region having an adequate area in a semiconductor substrate of a first conductivity type, a semiconductor element of the first conductivity type is formed in the semiconductor layer of the second conductivity type, and a semiconductor element of the second conductivity type is formed at the region where the semiconductor layer of the second conductivity type is not formed, and a method of fabricating the device.

REFERENCES:
patent: 5239197 (1993-08-01), Yamamoto
patent: 5323043 (1994-06-01), Kimura et al.
patent: 5362981 (1994-11-01), Sato et al.
patent: 5491358 (1996-02-01), Miyata et al.
Muller et al, Device Electronics for Ic's, p. 463, 1986.

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