Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1997-07-10
1999-06-08
Dutton, Brian
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257371, 257391, 257392, 257408, H01L 2976, H01L 2994, H01L 31062, H01L 31119
Patent
active
059106719
ABSTRACT:
An impurity for adjusting a threshold voltage is ion-implanted using, as masks, a resist for forming P.sup.- -type diffusion layers, a resist for forming N.sup.+ -type diffusion layers and N-type diffusion layers and a resist for forming P.sup.+ -type diffusion layers and N-type diffusion layers. For this reason, a semiconductor device including first to third N-channel transistors and first and second P-channel transistors, all of which respectively have different threshold voltages, can be manufactured without using an additional resist except for the above resists. Therefore, an operating margin at a low voltage can be increased and data retention characteristics can be improved in a memory without causing an increase in cost, an increase in power consumption and the like.
REFERENCES:
patent: 4753898 (1988-06-01), Parrillo et al.
patent: 4845047 (1989-07-01), Halloway et al.
patent: 4937645 (1990-06-01), Ootsuka et al.
patent: 5081515 (1992-01-01), Murata et al.
patent: 5399514 (1995-03-01), Ichikawa
Dutton Brian
Sony Corporation
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