Method of making a insulated gate bipolar transistor with high-e

Details Method of making a insulated gate bipolar transistor with high-e Method of making a insulated gate bipolar transistor with high-e

1997-06-09

1999-06-08

Thomas, Tom

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257139, 257330, H01L 2976, H01L 2974

Patent

active

059106689

ABSTRACT:
An improved insulated gate bipolar transistor (IGBT) device structure and a method for fabricating such a device. This structure uses self-aligned and substantially undiffused successive N+ and P+ implants. The P+ implant is at high energy, which forms a subsurface P+ region below the entire bottom of an N+ "source" region of the IGBT. This low resistivity region suppresses thyristor latch-up when contacted via a surface trench. Self-aligned techniques provide method and product improvements.

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Proceeding from the Fifth INternational Synopossium on Power Semi-conductor Devices and IC's, pp. 254-258 The Vertical IGBT With an Implanted Buried Layer, Eranen and Blomberg.

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