Active solid-state devices (e.g. – transistors – solid-state diode – With shielding
Patent
1998-03-31
2000-02-08
Clark, Sheila V.
Active solid-state devices (e.g., transistors, solid-state diode
With shielding
257288, 257660, H01L 23552
Patent
active
060230959
ABSTRACT:
There is disclosed a semiconductor device which is at least partially provided with an element having one-conductive type layers 7 and 9 being conductive in reverse to an oppsite conductive type semiconductor substrate 1. At the same time when the one-conductive type layers are formed, the one-conductive type layers 7' and 9' are formed in a region in which a signal input/output pad 14 is formed. Additionally, contact holes 11' are made in peripheral positions of the one-conductive type layers 7' and 9' in an interlayer insulating film 10 which is formed on a surface of the semiconductor substrate 1. In a region surrounded by the contact holes 11, on a surface of the interlayer insulating film 10, the signal input/output pad 14 is formed. Simultaneously with formation of the signal input/output pad 14, in a peripheral position of the signal input/output pad 14 formed is a noise shielding electrode 15 which is electrically connected to the contact holes 11.
REFERENCES:
patent: 5136357 (1992-08-01), Hesson et al.
patent: 5459349 (1995-10-01), Kobatake
patent: 5585664 (1996-12-01), Ito
Patent Abstracts of Japan, vol. 017, No. 398 (E-1403), Jul. 26, 1993.
Patent Abstracts of Japan, vol. 095, No. 007, Aug. 31, 1995.
Clark Sheila V.
NEC Corporation
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