Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1998-12-07
2000-02-08
Abraham, Fetsum
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257348, 257349, 257350, 257351, 257352, 257353, 257339, 257367, 257409, 257488, H01L 21266, H01L 2701
Patent
active
060230908
ABSTRACT:
A lateral thin-film Silicon-On-Insulator (SOI) device includes a semiconductor substrate, a buried insulating layer on the substrate and a lateral MOS device on the buried insulating layer and having a source region of a first conductivity type formed in a body region of a second conductivity type opposite to that of the first. A lateral drift region of a first conductivity type is provided adjacent the body region, and a drain region of the first conductivity type is provided laterally spaced apart from the body region by the drift region. A gate electrode is provided over a part of the body region in which a channel region is formed during operation and over at least a part of the lateral drift region adjacent the body region, with the gate electrode being insulated from the body region and drift region by an insulation region. In order to provide an optimum combination of low "on" resistance and high breakdown voltage, the lateral drift region is provided with a plurality of spaced-apart zones of the second conductivity type extending horizontally in a lateral direction from the body region toward the drain region and having a varying charge level in the lateral direction.
REFERENCES:
patent: 5246870 (1993-09-01), Merchant
patent: 5294824 (1994-03-01), Okada
patent: 5300448 (1994-04-01), Merchant et al.
patent: 5378912 (1995-01-01), Pein
patent: 5412241 (1995-05-01), Merchant
patent: 5648671 (1997-07-01), Merchant
patent: 5710451 (1998-01-01), Merchant
PHA 23,337, U.S. application No. 08/998,048, Filed: Dec. 24,1997.
Letavic Theodore
Simpson Mark
Abraham Fetsum
Biren Steven R.
Philips Electronics North America Corporation
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