Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1998-05-28
2000-02-08
Abraham, Fetsum
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257 59, 257 63, 257 65, 257 66, 257347, B32B 516
Patent
active
060230886
ABSTRACT:
The semiconductor device includes and the method for fabricating the same forms a damaged region under a gate electrode to improve device performance and simplify the process. The semiconductor device includes a substrate in which a buried insulating layer is formed; device isolating layers buried in first predetermined areas of the substrate to contact with the buried insulating layer; a gate electrode formed over a second predetermined area of the substrate; sidewall spacers formed on both sides of the gate electrode; source and drain regions at both sides of the gate electrode; and the damaged region at boundary of the buried insulating layer under the gate electrode.
REFERENCES:
patent: 5698869 (1997-12-01), Yoshimi et al.
International Electron Devices Meeting 1995 Washington D.C. Dec. 10-13, 1995 pp. 1-4.
Abraham Fetsum
LG Semicon Co. Ltd.
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