Method of forming a film in recess by vapor phase growth

Details Method of forming a film in recess by vapor phase growth Method of forming a film in recess by vapor phase growth

1995-03-10

2000-02-08

Bowers, Charles

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438782, 427240, 4272555, H01L 2100, C23C 1600

Patent

active

060228067

ABSTRACT:
A wafer having a recess with an aspect ratio of 0.5 or above on a surface to be processed is placed on a holder provided within a process chamber. A process gas consisting of a mixture of a material gas of SiH.sub.4 and a carrier gas of H.sub.2 is uniformly supplied to the surface of the wafer vertically. The pressure within the process chamber is set at 1 Torr or above. The temperature of the surface to be processed of the wafer is set at 600.degree. C. to 800.degree. C. Under these conditions, a polysilicon film is formed in the recess by a vapor phase growth method. During the formation of the film, the wafer is rotated at 500 rpm or above by an output of a motor via a holder. Thereby, a high film formation rate and a good step coverage can be made compatible.

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Wolf, Stanley, Silicon Processing for the VLSI ERA, vol. 1, pp. 177-180, 1986.
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