Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1996-12-18
1999-06-08
Quach, T. N.
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438633, 438634, 438637, 438648, H01L 2128, H01L 21311
Patent
active
059100206
ABSTRACT:
Disclosed is a method for fabricating a semiconductor device which prevents generation of imperfections in an aluminum alloy as an upper wiring even when part of a refractory metal pillar, which fills in a contact hole connecting lower and upper wiring layers, is exposed due to displacement of the upper wiring layer. The method comprises forming a third insulation film, a second insulation film and a second wiring layer, on a first wiring layer, forming holes which extend to the first wiring layer therethrough, forming refractory metal pillars by filling in the holes with a refractory metals, and forming a fourth insulation film. The second wiring layer is formed within a groove formed by removing the third and fourth insulation films to expose top and side surfaces of the refractory metal pillar. Even when displacement is caused between the refractory metal pillar and the second wiring layer, the reliability does not decrease, since the refractory metal pillars are covered with the fourth insulation film. The second wiring layer is preferably formed by polishing.
REFERENCES:
patent: 5229326 (1993-07-01), Dennison et al.
patent: 5286675 (1994-02-01), Chen et al.
patent: 5429995 (1995-07-01), Nishiyama et al.
patent: 5612254 (1997-03-01), Mu et al.
patent: 5736457 (1998-04-01), Zhao
Wolf, S., Silicon Processing for the VLSI Era, vol. 2, 1990, Lattice Press, pp. 192-194, 245-253, 279-283.
NEC Corporation
Quach T. N.
LandOfFree
Method for fabricating a semiconductor device having a refractor does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for fabricating a semiconductor device having a refractor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for fabricating a semiconductor device having a refractor will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1680567