Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Patent
1999-05-25
2000-02-08
Niebling, John F.
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
438152, 438153, 438154, H01L 2100
Patent
active
060227656
ABSTRACT:
Disclosed is a semiconductor device having a silicon on insulator structure capable of achieving a high integration, and a manufacturing method of the same. The semiconductor device includes a semiconductor substrate having a silicon on insulator structure, in which a insulating layer and a semiconductor layer are formed on a semiconductor wafer in sequence. A gate insulating film and a gate are formed on the semiconductor layer. A first impurity diffusion region and a second impurity diffusion region are formed in the semiconductor layer at both sides of the gate. A intermediate insulating layer having a first contact hole for exposing a predetermined portion of the first impurity diffusion region and a second contact hole for exposing a predetermined portion of the second impurity diffusion region and a predetermined portion of the water, is formed on an overall surface of the substrate. A first interconnection layer is electrically connected with the first impurity diffusion region through the first contact hole, and a second interconnection layer is electrically connected with the second impurity diffusion region and the predetermined portion of the wafer through the second contact hole.
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English translation of abstract for JP 6-244416 (Sep. 2, 1994).
English translation of abstract for JP 5-347412 (Dec. 27, 1993).
Hyundai Electronics Industries Co,. Ltd.
Lebentritt Michael S.
Niebling John F.
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