Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering
Patent
1997-09-03
2000-02-08
Nguyen, Nam
Chemistry: electrical and wave energy
Processes and products
Coating, forming or etching by sputtering
20419226, 20419227, 20419228, C23C 1434
Patent
active
060224584
ABSTRACT:
A method of forming a Si film by a bias sputtering process comprises the steps of generating plasma between a target electrode holding a target material provided in a vacuum container and a substrate electrode holding a deposited film forming substrate, provided opposingly to the target electrode, by the use of a high-frequency energy to cause the target material to undergo sputtering, and applying a bias voltage to at least one of the target electrode and the substrate electrode to form a Si film comprised of atoms deposited by sputtering on the substrate, wherein;
a mixed-gas environment comprising a mixture of an inert gas and a hydrogen gas is formed in the vacuum container, and the target material is subjected to sputtering while controlling H.sub.2 O gas, CO gas and CO.sub.2 gas in the mixed-gas environment to have a partial pressure of 1.0.times.10.sup.-8 Torr or less each, to form an epitaxial film on the substrate while maintaining a substrate temperature in the range of from 400.degree. C. to 700.degree. C.
A semiconductor substrate comprises an Si layer having a carbon content, a hydrogen content and a rare gas (X) content of C.ltoreq.1.times.10.sup.18 cm.sup.-3, 1.times.10.sup.15 cm.sup.-3 .ltoreq.H.ltoreq.1.times.10.sup.20 cm.sup.-3 and 1.times.10.sup.16 cm.sup.-3 .ltoreq.X, respectively, and having a difference of 15 nm or less between a maximum value and a minimum value of surface roughness.
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Feng, G., et al. "Silicon Epitaxy at 230.degree.C by Reactive DC Magnetron Sputtering and its in Situ Ellipsometry Monitoring", Appl. Phys. Ltrs., 59, 330-332 (1991).
Canon Kabushiki Kaisha
Nguyen Nam
VerSteeg Steven H.
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