Semiconductor device having a gate electrode film containing nit

Details Semiconductor device having a gate electrode film containing nit Semiconductor device having a gate electrode film containing nit

1998-01-20

1999-11-30

Jackson, Jr., Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257760, 257640, H01L 2976, H01L 31113

Patent

active

059947497

ABSTRACT:
There is disclosed a semiconductor device which includes a semiconductor substrate having an element region and source and drain regions, a gate dielectric film containing nitrogen formed in the element region of said semiconductor substrate, a gate electrode formed on the gate dielectric film, a first dielectric film formed adjacent to the gate electrode so as to define a side wall therefor, a second dielectric film formed so as to cover the gate electrode and the first dielectric film, the second dielectric film being doped with nitrogen, and a third dielectric film formed so as to cover the second dielectric film, the third dielectric film being formed of silicon nitride. A method for manufacturing such a semiconductor device is also described.

REFERENCES:
patent: 4869781 (1989-09-01), Euen et al.
patent: 5369297 (1994-11-01), Kusunoki et al.
patent: 5459688 (1995-10-01), Pfiester et al.
patent: 5516707 (1996-05-01), Loh et al.
patent: 5525541 (1996-06-01), Krauz et al.
patent: 5554871 (1996-09-01), Yamashita et al.
patent: 5600165 (1997-02-01), Tsukamoto et al.
patent: 5712208 (1998-01-01), Tseng et al.

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