Integrated circuit device

Details Integrated circuit device Integrated circuit device

1995-06-07

1999-11-30

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257370, 257378, 257557, H01L 2701

Patent

active

059947390

ABSTRACT:
An integrated circuit device comprising an active layer of a first conductivity type insulatively disposed over a semiconductor substrate, a lateral bipolar transistor fabricated in the active layer, the lateral bipolar transistor comprising a first base layer of a second conductivity type which is formed in the active layer, an emitter layer of the first conductivity, and a collector of the first conductivity which is formed in the active layer on a lateral side of the first base layer, a MOS transistor fabricated in the active layer, the MOS transistor comprising a second base layer of the second conductivity type, a source layer of the first conductivity type which is formed in the second base layer, a drain layer of the first conductivity type which is formed in the active layer, and a gate electrode insulatively disposed over the second base layer between the source layer and the drain layer, and an isolation layer formed in the active layer for separating the bipolar transistor and the MOS transistor from each other.

REFERENCES:
patent: 4050965 (1977-09-01), Ipri et al.
patent: 4419685 (1983-12-01), Sugawara et al.
patent: 4897698 (1990-01-01), Zorinsky et al.
patent: 4965872 (1990-10-01), Vasudev
patent: 5075737 (1991-12-01), Shinohara
patent: 5212397 (1993-05-01), See et al.
patent: 5477065 (1995-12-01), Nakagawa et al.

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