Modified gate structure for non-volatile memory and its method o

Details Modified gate structure for non-volatile memory and its method o Modified gate structure for non-volatile memory and its method o

1998-07-21

1999-11-30

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257411, 257412, H01L 29788

Patent

active

059947349

ABSTRACT:
A modified gate structure for a non-volatile memory device is formed over a substrate. The modified gate structure from bottom to top comprises a first dielectric layer, a first conductive layer, a second dielectric layer formed on said first conductive layer, a third dielectric layer, a refractory metal layer, and a second conductive layer. The third dielectric layer is made of tantalum oxide or BST, and the refractory metal layer can be made of tungsten, platinum, titanium, molybdenum, and tantalum.

REFERENCES:
patent: 3690945 (1972-09-01), Kuisl
patent: 5619051 (1997-04-01), Endo
patent: 5739566 (1998-04-01), Ota

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