Semiconductor device and fabrication method thereof

Details Semiconductor device and fabrication method thereof Semiconductor device and fabrication method thereof

1997-07-16

1999-11-30

Monin, Jr., Donald L.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257297, 257345, 257400, H01L 2968, H01L 2978

Patent

active

059947314

ABSTRACT:
A semiconductor device comprising a semiconductor substrate of a first conductivity type, an element separating field oxide film formed on the semiconductor substrate and a MOS transistor formed in an element area defined by the field oxide film. The MOS transistor includes a gate electrode and source and drain regions each comprising a diffusion layer of a second conductivity type opposite the conductivity type of the semiconductor substrate. The semiconductor device further comprises a channel stopper of the first conductivity type and a punch-through stopper of the first conductivity type provided below the field oxide film and gate electrode, respectively. Furthermore, a diffusion layer of the second conductivity type of the MOS transistor does not contact the channel stopper and the punch-through stopper. Also disclosed is a method of fabricating the semiconductor device.

REFERENCES:
patent: 5276344 (1994-01-01), Arima et al.
patent: 5384476 (1995-01-01), Nishizawa et al.
patent: 5412237 (1995-05-01), Komori et al.

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