Substituted ethylene precursor and synthesis method

Organic compounds -- part of the class 532-570 series – Organic compounds – Heavy metal containing

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

556136, 427587, 427593, C07F 108, C07F 1500, C23C 1600

Patent

active

059945710

ABSTRACT:
A Cu(hfac) precursor with a substituted ethylene ligand has been provided. The substituted ethylene ligand includes bonds to molecules selected from the group consisting of C.sub.1 to C.sub.8 alkyl, C.sub.1 to C.sub.8 haloalkyl, H, and C.sub.1 to C.sub.8 alkoxyl. One variation, the 2-methyl-1-butene ligand precursor has proved to be stable at room temperature, and extremely volatile at higher temperatures. Copper deposited with this precursor has low resistivity and high adhesive characteristics. Because of the volatility, the deposition rate of copper deposited with this precursor is very high. A synthesis method has been provided which produces a high yield of the above-described precursor.

REFERENCES:
patent: 4385005 (1983-05-01), Doyle
patent: 4425281 (1984-01-01), Doyle
patent: 4434317 (1984-02-01), Doyle et al.
patent: 5028724 (1991-07-01), Ivankovits et al.
patent: 5085731 (1992-02-01), Norman et al.
patent: 5096737 (1992-03-01), Baum et al.
patent: 5144049 (1992-09-01), Norman et al.
patent: 5441766 (1995-08-01), Choi et al.
Article entitled, "Low-Temperature Chemical Vapor Deposition of High-Purity Copper from an Organometallic Source" by D.B. Beach, F. K. LeGoues & Cheo-Kun Hu, published in 1990 American Chemical Society, Chem., Mater. 1990, 2, pp. 216-219.
Article entitled, "Hot-Wall Chemical Vapor Deposition of Copper from Copper(I) Compounds, etc,", by H.K. Shin, K.M. Chi, M.J. Hampden-Smith, T.T. Kodas, J.D. Farr and M. Paffett, published in 1992 American Chemical Society, Chem. Mater. 1992,4, pp. 788-795.
Article entitled, "Alkene and Carbon Monoxide Derivatives of Copper(I) and Silver(I) B-Diketonates", by G. Doyle, K.A. Eriksen and D. Van Engen, published in Organometallics 1985, 4, pp. 830-835.
Article entitled, "Copper(I) tert-Butyl 3-Oxobutanoate Complexes as Precursors for Chemical Vapor Deposition of Copper", by H. Choi and S. Hwang, published in 1998 American Chemical Society, Chem. Mat. 1998, 10, pp. 2326-2328.
Article entitled, "Chemical Vapor Deposited Copper from Alkyne Stabilized Copper(I) Hexafluoracetylacetonated Complexes", by T. H. Baum and C. E. Larson, published in J. Electrochem. Soc. vol. 140, No. 1, Jan. 1993, pp. 154-158.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Substituted ethylene precursor and synthesis method does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Substituted ethylene precursor and synthesis method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Substituted ethylene precursor and synthesis method will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1674729

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.