Method for cleaning semiconductor wafers

Details Method for cleaning semiconductor wafers Method for cleaning semiconductor wafers

1997-08-13

1999-11-30

Chaudhari, Chandra

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

438905, 438906, H01L 2131

Patent

active

059942401

ABSTRACT:
A low temperature in-situ precleaning process for a semiconductor surface is disclosed. Ambient reactant gases, such as NF.sub.3 and GeH.sub.4, having a partial pressure of between approximately 10.sup.-8 and 700 Torr, are pulsed in a batch furnace at temperatures in the approximate range of 250 to 950 degrees Celsius and pressure in the approximate range of 4.times.10.sup.3 to 20.times.10.sup.3 Torr. This forms material on the surface that easily vaporizes in that temperature and pressure range, providing a clean surface for formation of the next layer. A similar in-situ cleaning process is performed at temperature ranges of between approximately 300 to 1,000 degrees Celsius for the equipment utilized in processing semiconductor substrates.

REFERENCES:
patent: 4786352 (1988-11-01), Benzing
patent: 5089441 (1992-02-01), Moslehi
patent: 5180435 (1993-01-01), Markunas et al.
patent: 5264396 (1993-11-01), Thakur et al.
patent: 5296258 (1994-03-01), Tay et al.
patent: 5326723 (1994-07-01), Petro et al.
patent: 5403434 (1995-04-01), Moslehi
patent: 5413670 (1995-05-01), Lagan et al.
patent: 5472508 (1995-12-01), Saxena
patent: 5658391 (1997-08-01), Buley et al.

Affiliated with

Also associated with

Rating

Method for cleaning semiconductor wafers does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for cleaning semiconductor wafers, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for cleaning semiconductor wafers will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1672107