Method for suppression pattern distortion associated with BPSG r

Details Method for suppression pattern distortion associated with BPSG r Method for suppression pattern distortion associated with BPSG r

1998-01-20

1999-11-30

Chaudhuri, Olik

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438760, 257760, H01L 214763

Patent

active

059942150

ABSTRACT:
Significant amounts of pattern distortion were found to be the result of reflowing borophosphosilicate glass (BPSG) and silicon dioxide shrinkage during high temperature junction anneals. In order to remedy this problem, a method for suppressing the pattern distortion by subjecting the wafer coated with BPSG and with silicon dioxide layers to a high temperature anneal before patterning is disclosed. The high temperature anneal densities the undoped silicon dioxide before patterning, so that shrinkage of the undoped silicon dioxide does not affect the patterning steps.

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